BS108ZL1G Tech Spezifikatioune
onsemi - BS108ZL1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - BS108ZL1G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | onsemi | |
Vgs (th) (Max) @ Id | 1.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-92 (TO-226) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 8Ohm @ 100mA, 2.8V | |
Power Dissipation (Max) | 350mW (Ta) | |
Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) | |
Package protegéieren | Cut Tape (CT) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2V, 2.8V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | |
Basis Produktnummer | BS108 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi BS108ZL1G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | BS108ZL1G | BS170-D26Z | BS170-D26Z | BS170-D75Z |
Hiersteller | onsemi | onsemi | Fairchild Semiconductor | onsemi |
Power Dissipation (Max) | 350mW (Ta) | 830mW (Ta) | 830mW (Ta) | 830mW (Ta) |
Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Serie | - | - | - | - |
Basis Produktnummer | BS108 | BS170 | - | BS170 |
Entworf fir Source Voltage (Vdss) | 200 V | 60 V | 60 V | 60 V |
Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V | 40 pF @ 10 V | 40 pF @ 10 V | 40 pF @ 10 V |
Vgs (th) (Max) @ Id | 1.5V @ 1mA | 3V @ 1mA | 3V @ 1mA | 3V @ 1mA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Fuert Volt (Max Rds On, Min Rds On) | 2V, 2.8V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 8Ohm @ 100mA, 2.8V | 5Ohm @ 200mA, 10V | 5Ohm @ 200mA, 10V | 5Ohm @ 200mA, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | TO-92 (TO-226) | TO-92-3 | TO-92-3 | TO-92-3 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Bulk | Cut Tape (CT) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 250mA (Ta) | 500mA (Ta) | 500mA (Ta) | 500mA (Ta) |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden BS108ZL1G PDF DataDhusts an onsemi Dokumentatioun fir BS108ZL1G - onsemi.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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