1N914TR Tech Spezifikatioune
Fairchild Semiconductor - 1N914TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - 1N914TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 10 mA | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor 1N914TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N914TR | 1N916B | 1N914BTR | 1N914TR |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Vishay General Semiconductor - Diodes Division |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | 5 µA @ 75 V | 5 µA @ 75 V | 5 µA @ 75 V |
| Reverse Recovery Time (trr) | 4 ns | 4 ns | 4 ns | 4 ns |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed |
| Supplier Device Package | DO-35 | DO-35 | DO-35 | DO-35 (DO-204AH) |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | 2pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | 4pF @ 0V, 1MHz |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 200mA | 200mA | 200mA |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 10 mA | 1 V @ 20 mA | 1 V @ 100 mA | 1 V @ 10 mA |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 75 V |
| Operatiounstemperatur - Junction | -65°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 150°C |
| Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | - | - | - | - |
1N916BonsemiDIODE GEN PURP 100V 200MA DO351N914BTRonsemiDIODE GEN PURP 100V 200MA DO351N914TRVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 75V 200MA DO351N939BNJS
1N914BWSTaiwan Semiconductor CorporationSOD-323F, 100V, 0.15A, SWITCHING1N914TRonsemiDIODE GEN PURP 100V 200MA DO351N914BWSDKR-NDFAIRCHI
1N914BWTFairchild SemiconductorDIODE GEN PURP 75V 200MA SOD523F
1N945BMicrochip TechnologyDIODE ZENER 11.7V 500MW DO35
1N914BWTonsemiDIODE GEN PURP 75V 200MA SOD523F1N916BFairchild SemiconductorRECTIFIER DIODE, 0.2A, 100V, DO-1N944BMicrochip TechnologyZENER DIODE
1N960B/TRMicrochip TechnologyVOLTAGE REGULATOR1N938BMicrochip TechnologyDIODE ZENER 9V 500MW DO351N914BTRFairchild SemiconductorRECTIFIER DIODE, 0.2A, 100V, DO-1N914BWSFairchild SemiconductorDIODE GEN PURP 75V 150MA SOD323F1N914BWSonsemiDIODE GEN PURP 75V 150MA SOD323F1N961BRLAMI Semiconductor/onsemi| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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