1N914BTR Tech Spezifikatioune
onsemi - 1N914BTR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - 1N914BTR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 100 mA | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-35 | |
| Speed | Small Signal =< 200mA (Io), Any Speed | |
| Serie | - | |
| Reverse Recovery Time (trr) | 4 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AH, DO-35, Axial | |
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | |
| Basis Produktnummer | 1N914B |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi 1N914BTR.
| Produktiounsattriff |  |
|
 |
 |
|---|---|---|---|---|
| Part Number | 1N914BTR | 1N914B | 1N914B | 1N914B |
| Hiersteller | onsemi | onsemi | Fairchild Semiconductor | NTE Electronics, Inc |
| Supplier Device Package | DO-35 | DO-35 | DO-35 | DO-35 |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 75 V | 5 µA @ 75 V | 5 µA @ 75 V | 5 µA @ 75 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 200mA | 200mA | 200mA | 200mA |
| Basis Produktnummer | 1N914B | 1N914B | - | - |
| Reverse Recovery Time (trr) | 4 ns | 4 ns | 4 ns | 4 ns |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 100 mA | 1 V @ 100 mA | 1 V @ 200 mA | 1 V @ 100 mA |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bag |
| Serie | - | - | - | - |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 100 V | 100 V |
| Package / Case | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial | DO-204AH, DO-35, Axial |
| Capacitance @ Vr, F. | 4pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | 4pF @ 0V, 1MHz | 4pF @ 0V, 1MHz |
| Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -65°C ~ 175°C | -65°C ~ 175°C |
Eroflueden 1N914BTR PDF DataDhusts an onsemi Dokumentatioun fir 1N914BTR - onsemi.
1N914BonsemiDIODE GEN PURP 100V 200MA DO35
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1N914B/TRAMI Semiconductor/onsemi
1N914BNXP Semiconductors1N914 - RECTIFIER DIODE, 0.2A, 11N914BFairchild SemiconductorRECTIFIER DIODE, 0.2A, 100V, DO-1N914BNTE Electronics, IncDIODE GEN PURP 100V 200MA DO351N914BWSFairchild SemiconductorDIODE GEN PURP 75V 150MA SOD323F1N914TRonsemiDIODE GEN PURP 100V 200MA DO351N914BWTonsemiDIODE GEN PURP 75V 200MA SOD523F1N914BWSDKR-NDFAIRCHI1N914TRFairchild SemiconductorRECTIFIER DIODE, 0.2A, 100V, DO-
1N914BTaiwan Semiconductor CorporationDO-35, 100V, 0.15A, SWITCHING DI
1N914TRVishay General Semiconductor - Diodes DivisionDIODE GEN PURP 75V 200MA DO351N914BWTFairchild SemiconductorDIODE GEN PURP 75V 200MA SOD523F1N914BWSonsemiDIODE GEN PURP 75V 150MA SOD323F1N914BTRFairchild SemiconductorRECTIFIER DIODE, 0.2A, 100V, DO-1N914BWSTaiwan Semiconductor CorporationSOD-323F, 100V, 0.15A, SWITCHING1N914BTBTC-NXP| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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