MBR30100CT-E1 Tech Spezifikatioune
Diodes Incorporated - MBR30100CT-E1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - MBR30100CT-E1
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 850 mV @ 15 A | |
| Voltage - DC Reverse (Vr) (Max) | 100 V | |
| Technologie | Schottky | |
| Supplier Device Package | TO-220-3 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 100 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 15A |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated MBR30100CT-E1.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | MBR30100CT-E1 | MBR30100CT | MBR30060CT | MBR30100PT |
| Hiersteller | Diodes Incorporated | Taiwan Semiconductor Corporation | GeneSiC Semiconductor | Yangjie Technology |
| Supplier Device Package | TO-220-3 | TO-220AB | Twin Tower | TO-247 |
| Aktuell - Reverse Leakage @ Vr | 100 µA @ 100 V | 200 µA @ 100 V | 8 mA @ 20 V | 50 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V | 100 V | 60 V | 100 V |
| Package / Case | TO-220-3 | TO-220-3 | Twin Tower | TO-247-3 |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 175°C |
| Package protegéieren | Tube | Tube | Bulk | Tape & Reel (TR) |
| Mounting Type | Through Hole | Through Hole | Chassis Mount | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Voltage - Viru (Vf) (Max) @ Wann | 850 mV @ 15 A | 940 mV @ 30 A | 750 mV @ 150 A | 800 mV @ 15 A |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 15A | 30A | 150A | 30A |
| Serie | - | - | - | - |
Eroflueden MBR30100CT-E1 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir MBR30100CT-E1 - Diodes Incorporated.
MBR30100CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 100V TO220MBR30060CTGeneSiC SemiconductorDIODE MODULE 60V 150A 2TOWERMBR30100PTYangjie TechnologyDiodes - Rectifiers - Single TO-
MBR30100CTSMC Diode SolutionsDIODE ARRAY SCHOTTKY 100V TO220MBR30090CTIXFNIGBT ModuleMBR30080CTGeneSiC SemiconductorDIODE MODULE 80V 150A 2TOWERMBR30100CTDiotec SemiconductorSchottkyD, 100V, 30A
MBR30100CTF-E1Diodes IncorporatedDIODE ARRAY SCHOTTKY 100V TO220F
MBR30100CTWLITEONMBR30100FCTYangjie TechnologyITO-220AB 100V 30A Diodes RectMBR30100HCTMHCHXMMBR30100CTGFIRSTMBR30100CT MOSDiodes Incorporated
MBR30100SMC Diode Solutions100V, 30A, TO-220AC, SCHOTTKY REMBR30100FCFRAGILEMBR30100CT_T0_00001Panjit International Inc.TO-220AB, SKYMBR30100CTYangjie TechnologyDiodes - Rectifiers - Single TO-MBR30100CTF-G1Diodes IncorporatedDIODE ARRAY SCHOTTKY 100V TO220F| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.