MBR30080CT Tech Spezifikatioune
GeneSiC Semiconductor - MBR30080CT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu GeneSiC Semiconductor - MBR30080CT
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | GeneSiC Semiconductor | |
| Voltage - Viru (Vf) (Max) @ Wann | 840 mV @ 150 A | |
| Voltage - DC Reverse (Vr) (Max) | 80 V | |
| Technologie | Schottky | |
| Supplier Device Package | Twin Tower | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | Twin Tower |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Chassis Mount | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 8 mA @ 20 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 150A | |
| Basis Produktnummer | MBR30080 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu GeneSiC Semiconductor MBR30080CT.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | MBR30080CT | MBR30100CT | MBR30100CT | MBR30100CT-E1 |
| Hiersteller | GeneSiC Semiconductor | SMC Diode Solutions | Diotec Semiconductor | Diodes Incorporated |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Serie | - | - | - | - |
| Basis Produktnummer | MBR30080 | MBR30100 | - | - |
| Aktuell - Reverse Leakage @ Vr | 8 mA @ 20 V | 1 mA @ 100 V | 50 µA @ 100 V | 100 µA @ 100 V |
| Supplier Device Package | Twin Tower | TO-220AB | TO-220AB | TO-220-3 |
| Technologie | Schottky | Schottky | Schottky | Schottky |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 150A | - | 15A | 15A |
| Voltage - DC Reverse (Vr) (Max) | 80 V | 100 V | 100 V | 100 V |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -50°C ~ 175°C | -55°C ~ 150°C |
| Voltage - Viru (Vf) (Max) @ Wann | 840 mV @ 150 A | 850 mV @ 15 A | 850 mV @ 15 A | 850 mV @ 15 A |
| Package / Case | Twin Tower | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Type | Chassis Mount | Through Hole | Through Hole | Through Hole |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
Eroflueden MBR30080CT PDF DataDhusts an GeneSiC Semiconductor Dokumentatioun fir MBR30080CT - GeneSiC Semiconductor.
MBR30045LMOTOROLAIGBT ModuleMBR30050CTMOTOROLAIGBT ModuleMBR30100CTSMC Diode SolutionsDIODE ARRAY SCHOTTKY 100V TO220MBR30100CTDiotec SemiconductorSchottkyD, 100V, 30AMBR30100CT-E1Diodes IncorporatedDIODE ARRAY SCHOTTKY 100V TO220MBR30050MOTOROLAIGBT Module
MBR30100CTTaiwan Semiconductor CorporationDIODE ARRAY SCHOTTKY 100V TO220
MBR30045CTGeneSiC SemiconductorDIODE MODULE 45V 150A 2TOWERMBR30045MOTOROLAIGBT Module
MBR30100SMC Diode Solutions100V, 30A, TO-220AC, SCHOTTKY REMBR30090CTIXFNIGBT ModuleMBR30060CTGeneSiC SemiconductorDIODE MODULE 60V 150A 2TOWERMBR30045CTLGeneSiC SemiconductorDIODE SCHOTTKY 45V 150A 2 TOWERMBR30100CTYangjie TechnologyDiodes - Rectifiers - Single TO-
MBR30100CTF-E1Diodes IncorporatedDIODE ARRAY SCHOTTKY 100V TO220FMBR30045CT MBRP30045CTMOTOROLAIGBT ModuleMBR30100CT MOSDiodes IncorporatedMBR30060MITSUBSHIIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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