GBPC2510 Tech Spezifikatioune
Diodes Incorporated - GBPC2510 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - GBPC2510
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBPC | |
| Serie | - | |
| Package / Case | 4-Square, GBPC |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tray | |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | |
| Mounting Type | QC Terminal | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | |
| Basis Produktnummer | GBPC2510 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated GBPC2510.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBPC2510 | GBPC2510W | GBPC2510W | GBPC2510W |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | SMC Diode Solutions | GeneSiC Semiconductor |
| Serie | - | - | - | - |
| Basis Produktnummer | GBPC2510 | GBPC2510 | GBPC2510 | GBPC2510 |
| Operatioun Temperatur | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | 25 A | 25 A | 25 A |
| Mounting Type | QC Terminal | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | GBPC | GBPC-W | GBPC-W | GBPC-W |
| Voltage - Peak Reverse (Max) | 1 kV | 1 kV | 1 kV | 1 kV |
| Package / Case | 4-Square, GBPC | 4-Square, GBPC-W | 4-Square, GBPC-W | 4-Square, GBPC-W |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Package protegéieren | Tray | Tray | Bulk | Bulk |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 1000 V | 5 µA @ 1000 V | 5 µA @ 1000 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12.5 A | 1.1 V @ 12.5 A | 1.1 V @ 12.5 A | 1.1 V @ 12.5 A |
Eroflueden GBPC2510 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir GBPC2510 - Diodes Incorporated.
GBPC2510WDiodes IncorporatedBRIDGE RECT 1PHASE 1V 25A GBPC-WGBPC2510WSMC Diode SolutionsBRIDGE RECT 1P 1KV 25A GBPC-WGBPC2510WGeneSiC SemiconductorBRIDGE RECT 1P 1KV 25A GBPC-W
GBPC2508WTaiwan Semiconductor Corporation25A, 800V, STANDARD BRIDGE RECTI
GBPC2508WYangjie TechnologyGBPC-W 800V 25.0A Diodes Bridg
GBPC2510onsemiBRIDGE RECT 1PHASE 1KV 25A GBPC
GBPC2510WonsemiBRIDGE RECT 1P 1KV 25A GBPC-WGBPC2510WTaiwan Semiconductor Corporation25A, 1000V, STANDARD BRIDGE RECTGBPC2510Taiwan Semiconductor Corporation25A, 1000V, STANDARD BRIDGE RECT
GBPC2510Yangjie TechnologyDiodes - Bridge Rectifiers GBPC
GBPC2510SURGE25A -1000V - GBPC - BRIDGEGBPC2508W-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 800V 25A GBPC-WGBPC2508WDiodes IncorporatedBRIDGE RECT 1PH 800KV 25A GBPC-W
GBPC2510WSURGE25A -1000V - GBPC-W - BRIDGE
GBPC2510-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 1KV 25A GBPC
GBPC2510SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 25A GBPCGBPC2510Fairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
GBPC2508WL-81E4/51Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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