GBPC2510 Tech Spezifikatioune
onsemi - GBPC2510 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu onsemi - GBPC2510
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | onsemi | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12.5 A | |
| Technologie | Standard | |
| Supplier Device Package | GBPC | |
| Serie | - | |
| Package / Case | 4-Square, GBPC |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | QC Terminal | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | |
| Basis Produktnummer | GBPC25 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | Not Applicable |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu onsemi GBPC2510.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | GBPC2510 | GBPC2510 | GBPC2508W | GBPC2510 |
| Hiersteller | onsemi | Diodes Incorporated | Fairchild Semiconductor | Yangjie Technology |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Serie | - | - | - | GBP |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 1000 V | 5 µA @ 800 V | 5 µA @ 1000 V |
| Voltage - Peak Reverse (Max) | 1 kV | 1 kV | 800 V | 1 kV |
| Package / Case | 4-Square, GBPC | 4-Square, GBPC | 4-Square, GBPC-W | 4-Square, GBPC |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 25 A | 25 A | 25 A | 25 A |
| Package protegéieren | Bulk | Tray | Bulk | Bulk |
| Supplier Device Package | GBPC | GBPC | GBPC-W | GBPC |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | QC Terminal | QC Terminal | Through Hole | Chassis Mount |
| Basis Produktnummer | GBPC25 | GBPC2510 | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.1 V @ 12.5 A | 1.1 V @ 12.5 A | 1.1 V @ 12.5 A | 1.1 V @ 12.5 A |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C |
Eroflueden GBPC2510 PDF DataDhusts an onsemi Dokumentatioun fir GBPC2510 - onsemi.
GBPC2510Diodes IncorporatedBRIDGE RECT 1PHASE 1V 25A GBPCGBPC2508WFairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,GBPC2510Yangjie TechnologyDiodes - Bridge Rectifiers GBPC
GBPC2508WL-81E4/51Electro-Films (EFI) / VishayGBPC2510Fairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
GBPC2510Taiwan Semiconductor Corporation25A, 1000V, STANDARD BRIDGE RECT
GBPC2510WSMC Diode SolutionsBRIDGE RECT 1P 1KV 25A GBPC-WGBPC2508WDiodes IncorporatedBRIDGE RECT 1PH 800KV 25A GBPC-W
GBPC2510WGeneSiC SemiconductorBRIDGE RECT 1P 1KV 25A GBPC-W
GBPC2508WonsemiBRIDGE RECT 1P 800V 25A GBPC-WGBPC2508WGeneSiC SemiconductorBRIDGE RECT 1P 800V 25A GBPC-WGBPC2508W-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 800V 25A GBPC-W
GBPC2510-E4/51Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 1KV 25A GBPC
GBPC2510SURGE25A -1000V - GBPC - BRIDGEGBPC2508WTaiwan Semiconductor Corporation25A, 800V, STANDARD BRIDGE RECTI
GBPC2510SMC Diode SolutionsBRIDGE RECT 1PHASE 1KV 25A GBPCGBPC2510WonsemiBRIDGE RECT 1P 1KV 25A GBPC-W
GBPC2508WYangjie TechnologyGBPC-W 800V 25.0A Diodes Bridg| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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