DMT6009LCT Tech Spezifikatioune
Diodes Incorporated - DMT6009LCT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMT6009LCT
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 13.5A, 10V | |
Power Dissipation (Max) | 2.2W (Ta), 25W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1925 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 33.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37.2A (Tc) | |
Basis Produktnummer | DMT6009 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMT6009LCT | DMT6009LPS-13 | DMT6010LFG-13 | DMT6007LFG-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±16V | ±16V | ±20V | ±20V |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Rds On (Max) @ Id, Vgs | 12mOhm @ 13.5A, 10V | 10mOhm @ 20A, 10V | 7.5mOhm @ 20A, 10V | 6mOhm @ 20A, 10V |
Supplier Device Package | TO-220-3 | PowerDI5060-8 | PowerDI3333-8 | POWERDI3333-8 |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37.2A (Tc) | 10.6A (Ta), 87A (Tc) | 13A (Ta), 30A (Tc) | 15A (Ta), 80A (Tc) |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 2.2W (Ta), 25W (Tc) | 2.3W (Ta) | 2.2W (Ta), 41W (Tc) | 2.2W (Ta), 62.5W (Tc) |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | - | Automotive, AEC-Q101 | - | - |
Package / Case | TO-220-3 | 8-PowerTDFN | 8-PowerVDFN | 8-PowerVDFN |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 33.5 nC @ 10 V | 33.5 nC @ 10 V | 41.3 nC @ 10 V | 41.3 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 1925 pF @ 30 V | 1925 pF @ 30 V | 2090 pF @ 30 V | 2090 pF @ 30 V |
Basis Produktnummer | DMT6009 | DMT6009 | DMT6010 | DMT6007 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Eroflueden DMT6009LCT PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMT6009LCT - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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