DMT6005LPS-13 Tech Spezifikatioune
Diodes Incorporated - DMT6005LPS-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMT6005LPS-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerDI5060-8 | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 50A, 10V | |
Power Dissipation (Max) | 2.6W (Ta), 125W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2962 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 47.1 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.9A (Ta), 100A (Tc) | |
Basis Produktnummer | DMT6005 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMT6005LPS-13.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMT6005LPS-13 | DMT6009LPS-13 | DMT6005LFG-7 | DMT6005LSS-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Basis Produktnummer | DMT6005 | DMT6009 | DMT6005 | DMT6005 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±16V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17.9A (Ta), 100A (Tc) | 10.6A (Ta), 87A (Tc) | 18A (Ta), 100A (Tc) | 13.5A (Ta) |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 60 V | 60 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2962 pF @ 30 V | 1925 pF @ 30 V | 3150 pF @ 30 V | 2962 pF @ 30 V |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 50A, 10V | 10mOhm @ 20A, 10V | 4.1mOhm @ 20A, 10V | 6mOhm @ 20A, 10V |
Supplier Device Package | PowerDI5060-8 | PowerDI5060-8 | POWERDI3333-8 | 8-SO |
FET Feature | - | - | - | - |
Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerVDFN | 8-SOIC (0.154", 3.90mm Width) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 47.1 nC @ 10 V | 33.5 nC @ 10 V | 48.7 nC @ 10 V | 47.1 nC @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2V @ 250µA | 2.5V @ 250µA | 3V @ 250µA |
Power Dissipation (Max) | 2.6W (Ta), 125W (Tc) | 2.3W (Ta) | 1.98W (Ta), 62.5W (Tc) | 1.3W (Ta) |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | - | - |
Eroflueden DMT6005LPS-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMT6005LPS-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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