DMT3003LFG-13 Tech Spezifikatioune
Diodes Incorporated - DMT3003LFG-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMT3003LFG-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | POWERDI3333-8 | |
Serie | Automotive, AEC-Q101 | |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V | |
Power Dissipation (Max) | 2.4W (Ta), 62W (Tc) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta), 100A (Tc) | |
Basis Produktnummer | DMT3003 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMT3003LFG-13.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMT3003LFG-13 | DMT3006LFG-13 | DMT3003LFGQ-13 | DMT10H015SK3-13 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Basis Produktnummer | DMT3003 | DMT3006 | DMT3003 | DMT10 |
Package / Case | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Rds On (Max) @ Id, Vgs | 3.2mOhm @ 20A, 10V | 6mOhm @ 12A, 10V | 3.2mOhm @ 20A, 10V | 14mOhm @ 20A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 100 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 2.4W (Ta), 62W (Tc) | 27.8W (Tc) | 2.4W (Ta), 62W (Tc) | 1.8W (Ta), 4.2W (Tc) |
Supplier Device Package | POWERDI3333-8 | PowerDI3333-8 | PowerDI3333-8 | TO-252, (D-Pak) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta), 100A (Tc) | 16A (Ta), 55.6A (Tc) | 22A (Ta), 100A (Tc) | 54A (Tc) |
Serie | Automotive, AEC-Q101 | Automotive, AEC-Q101 | Automotive, AEC-Q101 | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 6V, 10V |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V | 22.6 nC @ 10 V | 44 nC @ 10 V | 30.1 nC @ 10 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 4V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 15 V | 1320 pF @ 15 V | 2370 pF @ 15 V | 2343 pF @ 50 V |
Eroflueden DMT3003LFG-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMT3003LFG-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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