DMT10H014LSS-13 Tech Spezifikatioune
Diodes Incorporated - DMT10H014LSS-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMT10H014LSS-13
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | Automotive, AEC-Q101 | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 1.2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1871 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 33.3 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.9A (Ta) | |
| Basis Produktnummer | DMT10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMT10H014LSS-13.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMT10H014LSS-13 | DMT10H010LPS-13 | DMT2004UPS-13 | DMT3004LFG-13 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 20A, 10V | 9.5mOhm @ 13A, 10V | 5mOhm @ 20A, 10V | 4.5mOhm @ 20A, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-PowerTDFN | 8-PowerTDFN | 8-PowerVDFN |
| Input Capacitance (Ciss) (Max) @ Vds | 1871 pF @ 50 V | 3000 pF @ 50 V | 1683 pF @ 15 V | 2370 pF @ 15 V |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3.5V @ 250µA | 1.45V @ 250µA | 3V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 2.5V, 10V | 4.5V, 10V |
| Basis Produktnummer | DMT10 | DMT10 | DMT2004 | DMT3004 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.9A (Ta) | 9.4A (Ta), 98A (Tc) | 80A (Tc) | 10.4A (Ta), 25A (Tc) |
| Vgs (Max) | ±20V | ±20V | ±12V | +20V, -16V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | Automotive, AEC-Q101 | - | Automotive, AEC-Q101 | Automotive, AEC-Q101 |
| Power Dissipation (Max) | 1.2W (Ta) | 1.2W (Ta), 139W (Tc) | 3W (Ta) | 2.1W (Ta), 42W (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 33.3 nC @ 10 V | 71 nC @ 10 V | 53.7 nC @ 10 V | 44 nC @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 24 V | 30 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Supplier Device Package | 8-SO | PowerDI5060-8 | PowerDI5060-8 | PowerDI3333-8 |
Eroflueden DMT10H014LSS-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMT10H014LSS-13 - Diodes Incorporated.
DMT10H025SSSDiodes IncorporatedDMT10H010LPS-13Diodes IncorporatedMOSFET N-CH 100V 9.4A PWRDI5060DMT2004UPS-13Diodes IncorporatedMOSFET N-CH 24V 80A PWRDI5060-8DMT3004LFG-13Diodes IncorporatedMOSFET NCH 30V 10.4A POWERDIDMT10H017LPD-13Diodes IncorporatedMOSFET BVDSS: 61V-100V POWERDI50
DMT10H015SK3-13Diodes IncorporatedMOSFET N-CH 100V 54A TO252DMT3004LFG-7Diodes IncorporatedMOSFET NCH 30V 10.4A POWERDIDMT10H015LFG-13Diodes IncorporatedMOSFET N-CH 100V PWRDI3333DMT3003LFGQ-13Diodes IncorporatedMOSFET N-CH 30V 22A PWRDI3333DMT3003LFG-7Diodes IncorporatedMOSFET N-CH 30V 22A PWRDI3333DMT10H009SPS-13Diodes IncorporatedMOSFET N-CH 100V PWRDI5060
DMT10H010LCTDiodes IncorporatedMOSFET N-CH 100V 98A TO220ABDMT10H010LSS-13Diodes IncorporatedMOSFET N-CH 100V 11.5A/29.5A 8SODMT10H009LPS-13Diodes IncorporatedMOSFET N-CH 100V PWRDI5060DMT10H015LK3-13Diodes IncorporatedMOSFET N-CHANNEL 100V 50A TO252DMT10H009LSS-13Diodes IncorporatedMOSFET N-CH 100V 13A/48A 8SO T&RDMT3003LFG-13Diodes IncorporatedMOSFET N-CH 30V 22A PWRDI3333DMT10H015LSS-13Diodes IncorporatedMOSFET N-CH 100V 8.3A 8SO| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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