DMN65D8LFB-7 Tech Spezifikatioune
Diodes Incorporated - DMN65D8LFB-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN65D8LFB-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 2V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | X1-DFN1006-3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 115mA, 10V | |
| Power Dissipation (Max) | 430mW (Ta) | |
| Package / Case | 3-UFDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 25 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 260mA (Ta) | |
| Basis Produktnummer | DMN65 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN65D8LFB-7.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | DMN65D8LFB-7 | DMN65D9L-7 | DMN63D8LW-7 | DMN65D8LW-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 25 V | 41 pF @ 25 V | 23.2 pF @ 25 V | 22 pF @ 25 V |
| FET Feature | - | - | - | - |
| Supplier Device Package | X1-DFN1006-3 | SOT-23-3 | SOT-323 | SOT-323 |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 115mA, 10V | 4Ohm @ 500mA, 10V | 2.8Ohm @ 250mA, 10V | 3Ohm @ 115mA, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 5V, 10V | 4V, 10V | 2.5V, 10V | 5V, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 260mA (Ta) | 335mA (Ta) | 380mA (Ta) | 300mA (Ta) |
| Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 30 V | 60 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V | ±16V | ±20V | ±20V |
| Vgs (th) (Max) @ Id | 2V @ 250µA | 2.5V @ 250µA | 1.5V @ 250µA | 2V @ 250µA |
| Serie | - | - | - | - |
| Package / Case | 3-UFDFN | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 | SC-70, SOT-323 |
| Basis Produktnummer | DMN65 | DMN65 | DMN63 | DMN65 |
| Power Dissipation (Max) | 430mW (Ta) | 270mW (Ta) | 300mW (Ta) | 300mW (Ta) |
Eroflueden DMN65D8LFB-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN65D8LFB-7 - Diodes Incorporated.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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