DMN63D8LW-13 Tech Spezifikatioune
Diodes Incorporated - DMN63D8LW-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMN63D8LW-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-323 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 2.8Ohm @ 250mA, 10V | |
Power Dissipation (Max) | 300mW (Ta) | |
Package / Case | SC-70, SOT-323 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 23.2 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 380mA (Ta) | |
Basis Produktnummer | DMN63 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMN63D8LW-13.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMN63D8LW-13 | DMN65D8LFB-7 | DMN63D8L-13 | DMN63D1LW-7 |
Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Gate Charge (Qg) (Max) @ Vgs | 0.9 nC @ 10 V | - | 0.9 nC @ 10 V | 0.3 nC @ 4.5 V |
Vgs (th) (Max) @ Id | 1.5V @ 250µA | 2V @ 250µA | 1.5V @ 250µA | 2.5V @ 1mA |
Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 30 V | 60 V |
Package / Case | SC-70, SOT-323 | 3-UFDFN | TO-236-3, SC-59, SOT-23-3 | SC-70, SOT-323 |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 300mW (Ta) | 430mW (Ta) | 350mW (Ta) | 310mW (Ta) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 23.2 pF @ 25 V | 25 pF @ 25 V | 23.2 pF @ 25 V | 30 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 2.8Ohm @ 250mA, 10V | 3Ohm @ 115mA, 10V | 2.8Ohm @ 250mA, 10V | 2Ohm @ 500mA, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | 5V, 10V | 2.5V, 10V | 5V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | DMN63 | DMN65 | DMN63 | DMN63 |
Serie | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 380mA (Ta) | 260mA (Ta) | 350mA (Ta) | 380mA (Ta) |
Supplier Device Package | SOT-323 | X1-DFN1006-3 | SOT-23-3 | SOT-323 |
Eroflueden DMN63D8LW-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMN63D8LW-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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