SPB80N04S2-H4 Tech Spezifikatioune
Infineon Technologies - SPB80N04S2-H4 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPB80N04S2-H4
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO263-3-2 | |
| Serie | OptiMOS™ | |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 80A, 10V | |
| Power Dissipation (Max) | 300W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 148 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
| Basis Produktnummer | SPB80N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPB80N04S2-H4.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SPB80N04S2-H4 | SPB80N03S2L-05 | SPB80N03S2L-03 | SPB80N03S2L-06 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 2V @ 110µA | 2V @ 250µA | 2V @ 80µA |
| Power Dissipation (Max) | 300W (Tc) | 167W (Tc) | 300W (Tc) | 150W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 80A, 10V | 4.9mOhm @ 55A, 10V | 2.8mOhm @ 80A, 10V | 5.9mOhm @ 80A, 10V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Basis Produktnummer | SPB80N | SPB80N | SPB80N | SPB80N |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 30 V | 30 V |
| FET Feature | - | - | - | - |
| Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 148 nC @ 10 V | 89.7 nC @ 10 V | 220 nC @ 10 V | 68 nC @ 10 V |
| Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V | 3320 pF @ 25 V | 8180 pF @ 25 V | 2530 pF @ 25 V |
Eroflueden SPB80N04S2-H4 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPB80N04S2-H4 - Infineon Technologies.
SPB80N03S2L-05Infineon TechnologiesMOSFET N-CH 30V 80A TO263-3SPB80N03S2L-03Infineon TechnologiesMOSFET N-CH 30V 80A TO263-3
SPB80N04S2-H4/2N04H4Cypress Semiconductor (Infineon Technologies)SPB80N03S2L-06Infineon TechnologiesMOSFET N-CH 30V 80A TO263-3SPB80N04S2-04Infineon TechnologiesMOSFET N-CH 40V 80A TO263-3SPB80N06S2-08/2N0608Cypress Semiconductor (Infineon Technologies)SPB80N03S2L-04Infineon TechnologiesMOSFET N-CH 30V 80A TO263-3SPB80N06S2-07Infineon TechnologiesMOSFET N-CH 55V 80A TO263-3SPB80N04Cypress Semiconductor (Infineon Technologies)
SPB80N06S2-05SPB80N04S2L-03Infineon TechnologiesMOSFET N-CH 40V 80A TO263-3SPB80N03S2LINENOISPB80N06S2-08Infineon TechnologiesMOSFET N-CH 55V 80A TO263-3SPB80N06S-08Cypress Semiconductor (Infineon Technologies)SPB80N03S2L-06GCypress Semiconductor (Infineon Technologies)SPB80N06S2-09Infineon TechnologiesMOSFET N-CH 55V 80A TO263-3SPB80N03S2L-03/2N03L03Cypress Semiconductor (Infineon Technologies)SPB80N06S2-05 MOSCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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