SPB80N03S2L-05 Tech Spezifikatioune
Infineon Technologies - SPB80N03S2L-05 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SPB80N03S2L-05
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 110µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3-2 | |
Serie | OptiMOS™ | |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 55A, 10V | |
Power Dissipation (Max) | 167W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 89.7 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | |
Basis Produktnummer | SPB80N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SPB80N03S2L-05.
Produktiounsattriff | ||||
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Part Number | SPB80N03S2L-05 | SPB80N03S2L-03 | SPB80N04S2-04 | SPB80N03S2L-06 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 89.7 nC @ 10 V | 220 nC @ 10 V | 170 nC @ 10 V | 68 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | SPB80N | SPB80N | SPB80N | SPB80N |
Vgs (th) (Max) @ Id | 2V @ 110µA | 2V @ 250µA | 4V @ 250µA | 2V @ 80µA |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 40 V | 30 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 4.9mOhm @ 55A, 10V | 2.8mOhm @ 80A, 10V | 3.4mOhm @ 80A, 10V | 5.9mOhm @ 80A, 10V |
Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 | PG-TO263-3-2 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Input Capacitance (Ciss) (Max) @ Vds | 3320 pF @ 25 V | 8180 pF @ 25 V | 6980 pF @ 25 V | 2530 pF @ 25 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Power Dissipation (Max) | 167W (Tc) | 300W (Tc) | 300W (Tc) | 150W (Tc) |
Serie | OptiMOS™ | OptiMOS™ | OptiMOS™ | OptiMOS™ |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Eroflueden SPB80N03S2L-05 PDF DataDhusts an Infineon Technologies Dokumentatioun fir SPB80N03S2L-05 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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