IRLR8503TRRPBF Tech Spezifikatioune
Infineon Technologies - IRLR8503TRRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLR8503TRRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V | |
Power Dissipation (Max) | 62W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 44A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLR8503TRRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLR8503TRRPBF | IRLR8721TRPBF | IRLR8259PBF | IRLR8503TRR |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | Infineon Technologies |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2.35V @ 25µA | 2.35V @ 25µA | 3V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Power Dissipation (Max) | 62W (Tc) | 65W (Tc) | 48W (Tc) | 62W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 44A (Tc) | 65A (Tc) | 57A (Tc) | 44A (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V | 8.4mOhm @ 25A, 10V | 8.7mOhm @ 21A, 10V | 16mOhm @ 15A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 25 V | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V | 13 nC @ 4.5 V | 10 nC @ 4.5 V | 20 nC @ 5 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V | 1030 pF @ 15 V | 900 pF @ 13 V | 1650 pF @ 25 V |
Eroflueden IRLR8503TRRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLR8503TRRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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