IRLR8503TR Tech Spezifikatioune
Infineon Technologies - IRLR8503TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLR8503TR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D-Pak | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V | |
Power Dissipation (Max) | 62W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 44A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLR8503TR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLR8503TR | IRLR8503TRPBF | IRLR8503 | IRLR8256TRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | International Rectifier |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 16mOhm @ 15A, 10V | 16mOhm @ 15A, 10V | 16mOhm @ 15A, 10V | 5.7mOhm @ 25A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 44A (Tc) | 44A (Tc) | 44A (Tc) | 81A (Tc) |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | 2.35V @ 25µA |
Supplier Device Package | D-Pak | D-Pak | D-Pak | D-Pak |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V | 20 nC @ 5 V | 20 nC @ 5 V | 15 nC @ 4.5 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 62W (Tc) | 62W (Tc) | 62W (Tc) | 63W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1650 pF @ 25 V | 1650 pF @ 25 V | 1650 pF @ 25 V | 1470 pF @ 13 V |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Bulk |
Eroflueden IRLR8503TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLR8503TR - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.