IRLML6401TR Tech Spezifikatioune
Infineon Technologies - IRLML6401TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML6401TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 950mV @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro3™/SOT-23 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Cut Tape (CT) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML6401TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRLML6401TR | IRLML6401TRPBF | IRLML6402GTRPBF | IRLML6344TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Entworf fir Source Voltage (Vdss) | 12 V | 12 V | 20 V | 30 V |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V | 15 nC @ 5 V | 12 nC @ 5 V | 6.8 nC @ 4.5 V |
| Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V | 830 pF @ 10 V | 633 pF @ 10 V | 650 pF @ 25 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A (Ta) | 4.3A (Ta) | 3.7A (Ta) | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V | 50mOhm @ 4.3A, 4.5V | 65mOhm @ 3.7A, 4.5V | 29mOhm @ 5A, 4.5V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Vgs (th) (Max) @ Id | 950mV @ 250µA | 950mV @ 250µA | 1.2V @ 250µA | 1.1V @ 10µA |
| FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
| Serie | - | HEXFET® | HEXFET® | HEXFET® |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden IRLML6401TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML6401TR - Infineon Technologies.
IRLML6346TRIRIRLML6401IRIRLML6401TRPBF.IRIRLML6401TRPBFInfineon TechnologiesMOSFET P-CH 12V 4.3A SOT23IRLML6401TRPBF-1IRIRLML6346IRIRLML6401/F7URVIRIRLML6402GTRPBFInfineon TechnologiesMOSFET P-CH 20V 3.7A SOT23IRLML6401TRPIRIRLML6401PBFIORIRLML6344TRPBFInfineon TechnologiesMOSFET N-CH 30V 5A MICRO3/SOT23IRLML6402GPBFIRIRLML6346TRPBFInfineon TechnologiesMOSFET N-CH 30V 3.4A SOT23
IRLML6344TRPBF MOSCypress Semiconductor (Infineon Technologies)IRLML6402SIPUSEMI
IRLML6401GTRPBFInfineon TechnologiesMOSFET P-CH 12V 4.3A SOT-23-3IRLML6402TR(EEA)IRIRLML6402TRInfineon TechnologiesMOSFET P-CH 20V 3.7A SOT-23| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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