IRLML6346TRPBF Tech Spezifikatioune
Infineon Technologies - IRLML6346TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML6346TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1.1V @ 10µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Micro3™/SOT-23 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 63mOhm @ 3.4A, 4.5V | |
Power Dissipation (Max) | 1.3W (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 24 V | |
Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A (Ta) | |
Basis Produktnummer | IRLML6346 |
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Produktiounsattriff | ||||
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Part Number | IRLML6346TRPBF | IRLML6401TR | IRLML6302TRPBF | IRLML6302TR |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 1.3W (Ta) | - | 540mW (Ta) | - |
Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 |
Rds On (Max) @ Id, Vgs | 63mOhm @ 3.4A, 4.5V | 50mOhm @ 4.3A, 4.5V | 600mOhm @ 610mA, 4.5V | 600mOhm @ 610mA, 4.5V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Cut Tape (CT) |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 1.1V @ 10µA | 950mV @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.9 nC @ 4.5 V | 15 nC @ 5 V | 3.6 nC @ 4.45 V | 3.6 nC @ 4.45 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.4A (Ta) | 4.3A (Ta) | 780mA (Ta) | 780mA (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | - | 2.7V, 4.5V | - |
Vgs (Max) | ±12V | - | ±12V | - |
Input Capacitance (Ciss) (Max) @ Vds | 270 pF @ 24 V | 830 pF @ 10 V | 97 pF @ 15 V | 97 pF @ 15 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | - |
FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
Basis Produktnummer | IRLML6346 | - | IRLML6302 | - |
Serie | HEXFET® | - | HEXFET® | - |
Entworf fir Source Voltage (Vdss) | 30 V | 12 V | 20 V | 20 V |
Eroflueden IRLML6346TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML6346TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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