IRLML2060TRPBF Tech Spezifikatioune
Infineon Technologies - IRLML2060TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML2060TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.5V @ 25µA | |
| Vgs (Max) | ±16V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro3™/SOT-23 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 1.2A, 10V | |
| Power Dissipation (Max) | 1.25W (Ta) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 64 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 0.67 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) | |
| Basis Produktnummer | IRLML2060 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML2060TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRLML2060TRPBF | IRLML2244TRPBF | IRLML0100TRPBF | IRLML2030TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Gate Charge (Qg) (Max) @ Vgs | 0.67 nC @ 4.5 V | 6.9 nC @ 4.5 V | 2.5 nC @ 4.5 V | 1 nC @ 4.5 V |
| Power Dissipation (Max) | 1.25W (Ta) | 1.3W (Ta) | 1.3W (Ta) | 1.3W (Ta) |
| Basis Produktnummer | IRLML2060 | IRLML2244 | IRLML0100 | IRLML2030 |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 1.2A, 10V | 54mOhm @ 4.3A, 4.5V | 220mOhm @ 1.6A, 10V | 100mOhm @ 2.7A, 10V |
| Vgs (Max) | ±16V | ±12V | ±16V | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 20 V | 100 V | 30 V |
| Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 |
| Input Capacitance (Ciss) (Max) @ Vds | 64 pF @ 25 V | 570 pF @ 16 V | 290 pF @ 25 V | 110 pF @ 15 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A (Ta) | 4.3A (Ta) | 1.6A (Ta) | 2.7A (Ta) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 2.5V @ 25µA | 1.1V @ 10µA | 2.5V @ 25µA | 2.3V @ 25µA |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Eroflueden IRLML2060TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML2060TRPBF - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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