IRLML0100TRPBF Tech Spezifikatioune
Infineon Technologies - IRLML0100TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLML0100TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.5V @ 25µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | Micro3™/SOT-23 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 220mOhm @ 1.6A, 10V | |
Power Dissipation (Max) | 1.3W (Ta) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | |
Basis Produktnummer | IRLML0100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLML0100TRPBF.
Produktiounsattriff | ||||
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Part Number | IRLML0100TRPBF | IRLML0060TRPBF | IRLML2060TRPBF | IRLML2030TRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | IRLML0100 | IRLML0060 | IRLML2060 | IRLML2030 |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power Dissipation (Max) | 1.3W (Ta) | 1.25W (Ta) | 1.25W (Ta) | 1.3W (Ta) |
Vgs (th) (Max) @ Id | 2.5V @ 25µA | 2.5V @ 25µA | 2.5V @ 25µA | 2.3V @ 25µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 2.5 nC @ 4.5 V | 2.5 nC @ 4.5 V | 0.67 nC @ 4.5 V | 1 nC @ 4.5 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 100 V | 60 V | 60 V | 30 V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
FET Feature | - | - | - | - |
Vgs (Max) | ±16V | ±16V | ±16V | ±20V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V | 290 pF @ 25 V | 64 pF @ 25 V | 110 pF @ 15 V |
Supplier Device Package | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 | Micro3™/SOT-23 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | 2.7A (Ta) | 1.2A (Ta) | 2.7A (Ta) |
Rds On (Max) @ Id, Vgs | 220mOhm @ 1.6A, 10V | 92mOhm @ 2.7A, 10V | 480mOhm @ 1.2A, 10V | 100mOhm @ 2.7A, 10V |
Eroflueden IRLML0100TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLML0100TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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