IRLH5036TRPBF Tech Spezifikatioune
Infineon Technologies - IRLH5036TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLH5036TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.5V @ 150µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-PQFN (5x6) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V | |
Power Dissipation (Max) | 3.6W (Ta), 160W (Tc) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 5360 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta), 100A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLH5036TRPBF.
Produktiounsattriff | ||||
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Part Number | IRLH5036TRPBF | IRLD024PBF | IRLH6224TR2PBF | IRLH5030TRPBF |
Hiersteller | Infineon Technologies | Vishay Siliconix | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 3.6W (Ta), 160W (Tc) | 1.3W (Ta) | - | 3.6W (Ta), 156W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V | 18 nC @ 5 V | 86 nC @ 10 V | 94 nC @ 10 V |
Supplier Device Package | 8-PQFN (5x6) | 4-HVMDIP | 8-PQFN (5x6) | 8-PQFN (5x6) |
Package protegéieren | Tape & Reel (TR) | Tube | Cut Tape (CT) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±16V | ±10V | - | ±16V |
Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V | 100mOhm @ 1.5A, 5V | 3mOhm @ 20A, 4.5V | 9mOhm @ 50A, 10V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Serie | HEXFET® | - | - | HEXFET® |
Input Capacitance (Ciss) (Max) @ Vds | 5360 pF @ 25 V | 870 pF @ 25 V | 3710 pF @ 10 V | 5185 pF @ 50 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4V, 5V | - | 4.5V, 10V |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Ta), 100A (Tc) | 2.5A (Ta) | 28A (Ta), 105A (Tc) | 13A (Ta), 100A (Tc) |
Vgs (th) (Max) @ Id | 2.5V @ 150µA | 2V @ 250µA | 1.1V @ 50µA | 2.5V @ 150µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Entworf fir Source Voltage (Vdss) | 60 V | 60 V | 20 V | 100 V |
Package / Case | 8-PowerVDFN | 4-DIP (0.300", 7.62mm) | 8-PowerTDFN | 8-PowerVDFN |
Eroflueden IRLH5036TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLH5036TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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