IRFSL7434PBF Tech Spezifikatioune
International Rectifier - IRFSL7434PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFSL7434PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | HEXFET®, StrongIRFET™ | |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V | |
Power Dissipation (Max) | 294W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 10820 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 324 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFSL7434PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFSL7434PBF | IRFSL7787PBF | IRFSL9N60A | IRFSL9N60APBF |
Hiersteller | International Rectifier | Infineon Technologies | Vishay Siliconix | Vishay Siliconix |
Package protegéieren | Bulk | Bulk | Tube | Tube |
Power Dissipation (Max) | 294W (Tc) | 125W (Tc) | 170W (Tc) | 170W (Tc) |
Serie | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ | - | - |
Entworf fir Source Voltage (Vdss) | 40 V | 75 V | 600 V | 600 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | - | 10V | 10V |
Rds On (Max) @ Id, Vgs | 1.6mOhm @ 100A, 10V | 8.4mOhm @ 46A, 10V | 750mOhm @ 5.5A, 10V | 750mOhm @ 5.5A, 10V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 195A (Tc) | 76A (Tc) | 9.2A (Tc) | 9.2A (Tc) |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±30V | ±30V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Input Capacitance (Ciss) (Max) @ Vds | 10820 pF @ 25 V | 4020 pF @ 25 V | 1400 pF @ 25 V | 1400 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 324 nC @ 10 V | 109 nC @ 10 V | 49 nC @ 10 V | 49 nC @ 10 V |
Supplier Device Package | TO-262 | TO-262 | TO-262-3 | I2PAK |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (th) (Max) @ Id | 3.9V @ 250µA | 3.7V @ 100µA | 4V @ 250µA | 4V @ 250µA |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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