IRFSL4410ZPBF Tech Spezifikatioune
Infineon Technologies - IRFSL4410ZPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFSL4410ZPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 150µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-262 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 58A, 10V | |
Power Dissipation (Max) | 230W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 97A (Tc) | |
Basis Produktnummer | IRFSL4410 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFSL4410ZPBF.
Produktiounsattriff | ||||
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Part Number | IRFSL4410ZPBF | IRFSL7437PBF | IRFSL7440PBF | IRFSL4310ZPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | International Rectifier |
Rds On (Max) @ Id, Vgs | 9mOhm @ 58A, 10V | 1.8mOhm @ 100A, 10V | 2.5mOhm @ 100A, 10V | 6mOhm @ 75A, 10V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 6V, 10V | 6V, 10V | 10V |
Package protegéieren | Tube | Tube | Tube | Bulk |
Supplier Device Package | TO-262 | TO-262 | TO-262 | TO-262 |
Power Dissipation (Max) | 230W (Tc) | 230W (Tc) | 208W (Tc) | 250W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Serie | HEXFET® | HEXFET®, StrongIRFET™ | HEXFET®, StrongIRFET™ | HEXFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 97A (Tc) | 195A (Tc) | 120A (Tc) | 120A (Tc) |
Entworf fir Source Voltage (Vdss) | 100 V | 40 V | 40 V | 100 V |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Basis Produktnummer | IRFSL4410 | IRFSL7437 | IRFSL7440 | - |
Vgs (th) (Max) @ Id | 4V @ 150µA | 3.9V @ 150µA | 3.9V @ 100µA | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V | 225 nC @ 10 V | 135 nC @ 10 V | 170 nC @ 10 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 50 V | 7330 pF @ 25 V | 4730 pF @ 25 V | 6860 pF @ 50 V |
Eroflueden IRFSL4410ZPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFSL4410ZPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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