IRFS4321PBF Tech Spezifikatioune
International Rectifier - IRFS4321PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFS4321PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V | |
| Power Dissipation (Max) | 350W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 150 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFS4321PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFS4321PBF | IRFS4310ZPBF | IRFS4310ZTRLPBF | IRFS4321TRLPBF |
| Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | Infineon Technologies |
| Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 170 nC @ 10 V | 170 nC @ 10 V | 110 nC @ 10 V |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 150µA | 4V @ 150µA | 5V @ 250µA |
| Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
| FET Feature | - | - | - | - |
| Supplier Device Package | D2PAK | PG-TO263-3-2 | D2PAK | D2PAK |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 85A (Tc) | 120A (Tc) | 120A (Tc) | 85A (Tc) |
| Power Dissipation (Max) | 350W (Tc) | 250W (Tc) | 250W (Tc) | 350W (Tc) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±30V | ±20V | ±20V | ±30V |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V | 6mOhm @ 75A, 10V | 6mOhm @ 75A, 10V | 15mOhm @ 33A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 25 V | 6860 pF @ 50 V | 6860 pF @ 50 V | 4460 pF @ 25 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 150 V | 100 V | 100 V | 150 V |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
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IRFS4321TRL7PPInfineon TechnologiesMOSFET N-CH 150V 86A D2PAK-7IRFS4410PBFInternational RectifierMOSFET N-CH 100V 88A TO263-3-2IRFS4321TRRPBFInfineon TechnologiesMOSFET N-CH 150V 85A D2PAKIRFS4321TRLPBF MOSIRIRFS4410 MOSIRIRFS4310ZTRPBFCypress Semiconductor (Infineon Technologies)IRFS4321IRIRFS4321-7PCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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