IRFS4310TRRPBF Tech Spezifikatioune
International Rectifier - IRFS4310TRRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRFS4310TRRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3-2 | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Bulk | |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRFS4310TRRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFS4310TRRPBF | IRFS4310PBF | IRFS4229TRLPBF | IRFS4310TRLPBF |
Hiersteller | International Rectifier | International Rectifier | Infineon Technologies | Infineon Technologies |
Vgs (Max) | ±20V | ±20V | ±30V | ±20V |
Supplier Device Package | PG-TO263-3-2 | D2PAK | PG-TO263-3 | D2PAK |
Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V | 250 nC @ 10 V | 110 nC @ 10 V | 250 nC @ 10 V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Power Dissipation (Max) | 300W (Tc) | 300W (Tc) | 330W (Tc) | 300W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 130A (Tc) | 130A (Tc) | 45A (Tc) | 130A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 50 V | 7670 pF @ 50 V | 4560 pF @ 25 V | 7670 pF @ 50 V |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V | 7mOhm @ 75A, 10V | 48mOhm @ 26A, 10V | 7mOhm @ 75A, 10V |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 250 V | 100 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.