IRFHM8326TRPBF Tech Spezifikatioune
Infineon Technologies - IRFHM8326TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFHM8326TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.2V @ 50µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 10V | |
Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) | |
Package / Case | 8-PowerTDFN | |
Package protegéieren | Tape & Reel (TR) | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2496 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Ta) | |
Basis Produktnummer | IRFHM8326 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFHM8326TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFHM8326TRPBF | IRFHM830DTRPBF | IRFHM8334TRPBF | IRFHM830DTR2PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | Infineon Technologies |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) | 2.8W (Ta), 37W (Tc) | 2.7W (Ta), 28W (Tc) | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Cut Tape (CT) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 19A (Ta) | 20A (Ta), 40A (Tc) | 13A (Ta), 43A (Tc) | 20A (Ta), 40A (Tc) |
Basis Produktnummer | IRFHM8326 | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Package / Case | 8-PowerTDFN | 8-VQFN Exposed Pad | 8-PowerVDFN | 8-VQFN Exposed Pad |
Vgs (th) (Max) @ Id | 2.2V @ 50µA | 2.35V @ 50µA | 2.35V @ 25µA | 2.35V @ 50µA |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | 27 nC @ 10 V | 15 nC @ 10 V | 27 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 20A, 10V | 4.3mOhm @ 20A, 10V | 9mOhm @ 20A, 10V | 4.3mOhm @ 20A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2496 pF @ 10 V | 1797 pF @ 25 V | 1180 pF @ 10 V | 1797 pF @ 25 V |
Serie | HEXFET® | HEXFET® | HEXFET® | - |
Eroflueden IRFHM8326TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFHM8326TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.