IRFHM8235TRPBF Tech Spezifikatioune
Infineon Technologies - IRFHM8235TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFHM8235TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.35V @ 25µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 3W (Ta), 30W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 25 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFHM8235TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFHM8235TRPBF | IRFHM831TR2PBF | IRFHM7194TRPBF | IRFHM830TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Serie | HEXFET® | - | FASTIRFET™, HEXFET® | HEXFET® |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 4.5 V | 16 nC @ 10 V | 19 nC @ 10 V | 31 nC @ 10 V |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 2.35V @ 25µA | 2.35V @ 25µA | 3.6V @ 50µA | 2.35V @ 50µA |
| Entworf fir Source Voltage (Vdss) | 25 V | 30 V | 100 V | 30 V |
| Vgs (Max) | ±20V | - | ±20V | ±20V |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 20A, 10V | 7.8mOhm @ 12A, 10V | 16.4mOhm @ 20A, 10V | 3.8mOhm @ 20A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1040 pF @ 10 V | 1050 pF @ 25 V | 733 pF @ 50 V | 2155 pF @ 25 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A (Ta) | 14A (Ta), 40A (Tc) | 9.3A (Ta), 34A (Tc) | 21A (Ta), 40A (Tc) |
| Power Dissipation (Max) | 3W (Ta), 30W (Tc) | - | 2.8W (Ta), 37W (Tc) | 2.7W (Ta), 37W (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 10V | 4.5V, 10V |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | 8-PowerVDFN |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-PQFN (3.3x3.3), Power33 | PQFN (3x3) | 8-PQFN (3.3x3.3), Power33 | 8-PQFN-Dual (3.3x3.3) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden IRFHM8235TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFHM8235TRPBF - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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