IRFH5106TR2PBF Tech Spezifikatioune
Infineon Technologies - IRFH5106TR2PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFH5106TR2PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-PQFN (5x6) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 50A, 10V | |
| Package / Case | 8-PowerVDFN | |
| Package protegéieren | Cut Tape (CT) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3090 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta), 100A (Tc) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFH5106TR2PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRFH5106TR2PBF | IRFH5104TRPBF | IRFH5053TRPBF | IRFH5053TR2PBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 100µA | 4.9V @ 100µA | 4.9V @ 100µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 21A (Ta), 100A (Tc) | 24A (Ta), 100A (Tc) | 9.3A (Ta), 46A (Tc) | 9.3A (Ta), 46A (Tc) |
| Package protegéieren | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) |
| Package / Case | 8-PowerVDFN | 8-VQFN Exposed Pad | 8-PowerVDFN | 8-PowerVDFN |
| Input Capacitance (Ciss) (Max) @ Vds | 3090 pF @ 25 V | 3120 pF @ 25 V | 1510 pF @ 50 V | 1510 pF @ 50 V |
| Supplier Device Package | 8-PQFN (5x6) | PQFN (5x6) | PQFN (5x6) Single Die | PQFN (5x6) Single Die |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 50A, 10V | 3.5mOhm @ 50A, 10V | 18mOhm @ 9.3A, 10V | 18mOhm @ 9.3A, 10V |
| FET Feature | - | - | - | - |
| Serie | - | HEXFET® | HEXFET® | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 60 V | 40 V | 100 V | 100 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V | 80 nC @ 10 V | 36 nC @ 10 V | 36 nC @ 10 V |
Eroflueden IRFH5106TR2PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFH5106TR2PBF - Infineon Technologies.
IRFH5104TRPBFInfineon TechnologiesMOSFET N-CH 40V 24A/100A PQFNIRFH5053TRPBFInfineon TechnologiesMOSFET N-CH 100V 9.3A/46A PQFNIRFH5053TRPBF MOSIRIRFH5053TR2PBFInfineon TechnologiesMOSFET N-CH 100V 9.3A PQFN56IRFH5206IRIRFH5104IRIRFH5104PBFIRIRFH5106TRPBFInfineon TechnologiesMOSFET N-CH 60V 21A/100A 8PQFNIRFH5106IRIRFH5204TRPBFInfineon TechnologiesMOSFET N-CH 40V 22A/100A PQFNIRFH5204IRIRFH5110PBFIRIRFH5204TR2PBFInfineon TechnologiesMOSFET N-CH 40V 22A PQFNIRFH5104TR2PBFInfineon TechnologiesMOSFET N-CH 40V 24A/100A PQFNIRFH5110IRIRFH5110TRPBFInfineon TechnologiesMOSFET N-CH 100V 11A/63A 8PQFNIRFH5053MIRIRFH5110TR2PBFInfineon TechnologiesMOSFET N-CH 100V 5X6 PQFN| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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