IRFH5104TR2PBF Tech Spezifikatioune
Infineon Technologies - IRFH5104TR2PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFH5104TR2PBF
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PQFN (5x6) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V | |
Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) | |
Package / Case | 8-VQFN Exposed Pad | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Ta), 100A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRFH5104TR2PBF.
Produktiounsattriff | ||||
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Part Number | IRFH5104TR2PBF | IRFH5110TR2PBF | IRFH5053TRPBF | IRFH5106TR2PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Serie | HEXFET® | - | HEXFET® | - |
FET Feature | - | - | - | - |
Supplier Device Package | PQFN (5x6) | 8-PQFN (5x6) | PQFN (5x6) Single Die | 8-PQFN (5x6) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Ta), 100A (Tc) | 11A (Ta), 63A (Tc) | 9.3A (Ta), 46A (Tc) | 21A (Ta), 100A (Tc) |
Entworf fir Source Voltage (Vdss) | 40 V | 100 V | 100 V | 60 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | - |
Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V | 3152 pF @ 25 V | 1510 pF @ 50 V | 3090 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V | 12.4mOhm @ 37A, 10V | 18mOhm @ 9.3A, 10V | 5.6mOhm @ 50A, 10V |
Vgs (th) (Max) @ Id | 4V @ 100µA | 4V @ 100µA | 4.9V @ 100µA | 4V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 8-VQFN Exposed Pad | 8-PowerVDFN | 8-PowerVDFN | 8-PowerVDFN |
Vgs (Max) | ±20V | - | ±20V | - |
Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) | - | 3.1W (Ta), 8.3W (Tc) | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Cut Tape (CT) |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | 72 nC @ 10 V | 36 nC @ 10 V | 75 nC @ 10 V |
Eroflueden IRFH5104TR2PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFH5104TR2PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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