IRF7807VTR Tech Spezifikatioune
Infineon Technologies - IRF7807VTR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7807VTR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Tape & Reel (TR) | |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | RoHS net konform |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7807VTR.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF7807VTR | IRF7807ZTRPBF | IRF7807VD1TR | IRF7807VD1PBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Feature | - | - | Schottky Diode (Isolated) | Schottky Diode (Isolated) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | 4.5V, 10V | 4.5V | 4.5V |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V | 13.8mOhm @ 11A, 10V | 25mOhm @ 7A, 4.5V | 25mOhm @ 7A, 4.5V |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 5 V | 11 nC @ 4.5 V | 14 nC @ 4.5 V | 14 nC @ 4.5 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | HEXFET® | HEXFET® | FETKY™ | FETKY™ |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta) | 11A (Ta) | 8.3A (Ta) | 8.3A (Ta) |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2.25V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Eroflueden IRF7807VTR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7807VTR - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.