IRF7807VD1PBF Tech Spezifikatioune
Infineon Technologies - IRF7807VD1PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7807VD1PBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | FETKY™ | |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V | |
| Power Dissipation (Max) | 2.5W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7807VD1PBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7807VD1PBF | IRF7807PBF | IRF7807TRPBF | IRF7807Z |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| FET Feature | Schottky Diode (Isolated) | - | - | - |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 1V @ 250µA | 1V @ 250µA | 2.25V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | 17 nC @ 5 V | 17 nC @ 5 V | 11 nC @ 4.5 V |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V | 25mOhm @ 7A, 4.5V | 25mOhm @ 7A, 4.5V | 13.8mOhm @ 11A, 10V |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | 8-SO |
| Serie | FETKY™ | HEXFET® | HEXFET® | HEXFET® |
| Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tube |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.3A (Ta) | 8.3A (Ta) | 8.3A (Ta) | 11A (Ta) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Tc) | 2.5W (Ta) | 2.5W (Ta) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V | 4.5V | 4.5V | 4.5V, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±20V | ±12V | ±12V | ±20V |
Eroflueden IRF7807VD1PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7807VD1PBF - Infineon Technologies.
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IRF7807ZPBFInternational RectifierMOSFET N-CH 30V 11A 8SOIRF7807TIRIRF7807VTRPBFInternational RectifierPLANAR <=40VIRF7807TRInfineon TechnologiesMOSFET N-CH 30V 8.3A 8SOIRF7807VD2Infineon TechnologiesMOSFET N-CH 30V 8.3A 8SOIRF7807VIRIRF7807VTR MOSIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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