IRF7726TR Tech Spezifikatioune
Infineon Technologies - IRF7726TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7726TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | Micro8™ | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V | |
| Power Dissipation (Max) | 1.79W (Ta) | |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2204 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Ta) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | RoHS net konform |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7726TR.
| Produktiounsattriff |  |
 |
 |
|
|---|---|---|---|---|
| Part Number | IRF7726TR | IRF7749L1TRPBF | IRF7705TR | IRF7739L2TRPBF |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | International Rectifier |
| Package / Case | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | DirectFET™ Isometric L8 | 8-TSSOP (0.173", 4.40mm Width) | DirectFET™ Isometric L8 |
| Input Capacitance (Ciss) (Max) @ Vds | 2204 pF @ 25 V | 12320 pF @ 25 V | 2774 pF @ 25 V | 11880 pF @ 25 V |
| FET Typ | P-Channel | N-Channel | P-Channel | N-Channel |
| Serie | HEXFET® | - | HEXFET® | HEXFET® |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 4.5V, 10V | 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 4V @ 250µA | 2.5V @ 250µA | 4V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Ta) | 33A (Ta), 200A (Tc) | 8A (Tc) | 46A (Ta), 375A (Tc) |
| Supplier Device Package | Micro8™ | DirectFET™ Isometric L8 | 8-TSSOP | DIRECTFET L8 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V | 1.5mOhm @ 120A, 10V | 18mOhm @ 8A, 10V | 1mOhm @ 160A, 10V |
| Power Dissipation (Max) | 1.79W (Ta) | 3.3W (Ta), 125W (Tc) | 1.5W (Tc) | 3.8W (Ta), 125W (Tc) |
| Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 30 V | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V | 300 nC @ 10 V | 88 nC @ 10 V | 330 nC @ 10 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden IRF7726TR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7726TR - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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