IRF7705TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7705TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7705TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-TSSOP | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V | |
Power Dissipation (Max) | 1.5W (Ta) | |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2774 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7705TRPBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF7705TRPBF | IRF7705TR | IRF7739L1TRPBF | IRF7726TRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Power Dissipation (Max) | 1.5W (Ta) | 1.5W (Tc) | 3.8W (Ta), 125W (Tc) | 1.79W (Ta) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V | 18mOhm @ 8A, 10V | 1mOhm @ 160A, 10V | 26mOhm @ 7A, 10V |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | 8-TSSOP | 8-TSSOP | DirectFET™ Isometric L8 | Micro8™ |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 8A (Tc) | 46A (Ta), 270A (Tc) | 7A (Ta) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V | 88 nC @ 10 V | 330 nC @ 10 V | 69 nC @ 10 V |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 40 V | 30 V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | DirectFET™ Isometric L8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 4V @ 250µA | 2.5V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 2774 pF @ 25 V | 2774 pF @ 25 V | 11880 pF @ 25 V | 2204 pF @ 25 V |
Eroflueden IRF7705TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7705TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.