IRF6714MTR1PBF Tech Spezifikatioune
Infineon Technologies - IRF6714MTR1PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF6714MTR1PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.4V @ 100µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DIRECTFET™ MX | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 2.1mOhm @ 29A, 10V | |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
Package / Case | DirectFET™ Isometric MX | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3890 pF @ 13 V | |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 29A (Ta), 166A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF6714MTR1PBF.
Produktiounsattriff | ||||
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Part Number | IRF6714MTR1PBF | IRF6714MTRPBF | IRF6713STRPBF | IRF6711STRPBF |
Hiersteller | Infineon Technologies | International Rectifier | International Rectifier | International Rectifier |
Supplier Device Package | DIRECTFET™ MX | DIRECTFET™ MX | DirectFET™ Isometric SQ | DirectFET™ Isometric SQ |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V | 44 nC @ 4.5 V | 32 nC @ 4.5 V | 20 nC @ 4.5 V |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) | 2.2W (Ta), 42W (Tc) | 2.2W (Ta), 42W (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 29A (Ta), 166A (Tc) | 29A (Ta), 166A (Tc) | 22A (Ta), 95A (Tc) | 19A (Ta), 84A (Tc) |
Package / Case | DirectFET™ Isometric MX | DirectFET™ Isometric MX | DirectFET™ Isometric SQ | DirectFET™ Isometric SQ |
Vgs (th) (Max) @ Id | 2.4V @ 100µA | 2.4V @ 100µA | 2.4V @ 50µA | 2.35V @ 25µA |
Serie | HEXFET® | HEXFET® | DirectFET™ | DirectFET™ |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V |
Input Capacitance (Ciss) (Max) @ Vds | 3890 pF @ 13 V | 3890 pF @ 13 V | 2880 pF @ 13 V | 1810 pF @ 13 V |
Rds On (Max) @ Id, Vgs | 2.1mOhm @ 29A, 10V | 2.1mOhm @ 29A, 10V | 3mOhm @ 22A, 10V | 3.8mOhm @ 19A, 10V |
Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Bulk |
Eroflueden IRF6714MTR1PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF6714MTR1PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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