IRF6713STRPBF Tech Spezifikatioune
International Rectifier - IRF6713STRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRF6713STRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.4V @ 50µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric SQ | |
Serie | DirectFET™ | |
Rds On (Max) @ Id, Vgs | 3mOhm @ 22A, 10V | |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) | |
Package / Case | DirectFET™ Isometric SQ |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package protegéieren | Bulk | |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 13 V | |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 25 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta), 95A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRF6713STRPBF.
Produktiounsattriff | ||||
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Part Number | IRF6713STRPBF | IRF6714MTRPBF | IRF6715MTRPBF | IRF6717MTRPBF |
Hiersteller | International Rectifier | International Rectifier | International Rectifier | Infineon Technologies |
Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 13 V | 3890 pF @ 13 V | 5340 pF @ 13 V | 6750 pF @ 13 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
Supplier Device Package | DirectFET™ Isometric SQ | DIRECTFET™ MX | DIRECTFET™ MX | DIRECTFET™ MX |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Ta), 95A (Tc) | 29A (Ta), 166A (Tc) | 34A (Ta), 180A (Tc) | 38A (Ta), 200A (Tc) |
Serie | DirectFET™ | HEXFET® | HEXFET® | HEXFET® |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V | 44 nC @ 4.5 V | 59 nC @ 4.5 V | 69 nC @ 4.5 V |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 2.4V @ 50µA | 2.4V @ 100µA | 2.4V @ 100µA | 2.35V @ 150µA |
Entworf fir Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V |
Package / Case | DirectFET™ Isometric SQ | DirectFET™ Isometric MX | DirectFET™ Isometric MX | DirectFET™ Isometric MX |
Rds On (Max) @ Id, Vgs | 3mOhm @ 22A, 10V | 2.1mOhm @ 29A, 10V | 1.6mOhm @ 34A, 10V | 1.25mOhm @ 38A, 10V |
Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 78W (Tc) | 2.8W (Ta), 96W (Tc) |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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