IRF6641TRPBF Tech Spezifikatioune
International Rectifier - IRF6641TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRF6641TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4.9V @ 150µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DIRECTFET™ MZ | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 59.9mOhm @ 5.5A, 10V | |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
Package / Case | DirectFET™ Isometric MZ | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.6A (Ta), 26A (Tc) | |
Basis Produktnummer | IRF6641 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRF6641TRPBF.
Produktiounsattriff | ||||
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Part Number | IRF6641TRPBF | IRF6643TR1PBF | IRF6644TRPBF | IRF6638TR1PBF |
Hiersteller | International Rectifier | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | 55 nC @ 10 V | 47 nC @ 10 V | 45 nC @ 4.5 V |
Package / Case | DirectFET™ Isometric MZ | DirectFET™ Isometric MZ | DirectFET™ Isometric MN | DirectFET™ Isometric MX |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V | 2340 pF @ 25 V | 2210 pF @ 25 V | 3770 pF @ 15 V |
Vgs (th) (Max) @ Id | 4.9V @ 150µA | 4.9V @ 150µA | 4.8V @ 150µA | 2.35V @ 100µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.6A (Ta), 26A (Tc) | 6.2A (Ta), 35A (Tc) | 10.3A (Ta), 60A (Tc) | 25A (Ta), 140A (Tc) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 59.9mOhm @ 5.5A, 10V | 34.5mOhm @ 7.6A, 10V | 13mOhm @ 10.3A, 10V | 2.9mOhm @ 25A, 10V |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 200 V | 150 V | 100 V | 30 V |
Basis Produktnummer | IRF6641 | - | IRF6644 | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | DIRECTFET™ MZ | DIRECTFET™ MZ | DIRECTFET™ MN | DIRECTFET™ MX |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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