IRF6644TR1PBF Tech Spezifikatioune
Infineon Technologies - IRF6644TR1PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF6644TR1PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4.8V @ 150µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DIRECTFET™ MN | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V | |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | |
Package / Case | DirectFET™ Isometric MN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.3A (Ta), 60A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF6644TR1PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF6644TR1PBF | IRF6641TRPBF | IRF6645TRPBF | IRF6643TRPBF |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) | 2.8W (Ta), 89W (Tc) | 2.2W (Ta), 42W (Tc) | 2.8W (Ta), 89W (Tc) |
Package / Case | DirectFET™ Isometric MN | DirectFET™ Isometric MZ | DirectFET™ Isometric SJ | DirectFET™ Isometric MZ |
Vgs (th) (Max) @ Id | 4.8V @ 150µA | 4.9V @ 150µA | 4.9V @ 50µA | 4.9V @ 150µA |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | DIRECTFET™ MN | DIRECTFET™ MZ | DIRECTFET™ SJ | DIRECTFET™ MZ |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | 48 nC @ 10 V | 20 nC @ 10 V | 55 nC @ 10 V |
Entworf fir Source Voltage (Vdss) | 100 V | 200 V | 100 V | 150 V |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 13mOhm @ 10.3A, 10V | 59.9mOhm @ 5.5A, 10V | 35mOhm @ 5.7A, 10V | 34.5mOhm @ 7.6A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.3A (Ta), 60A (Tc) | 4.6A (Ta), 26A (Tc) | 5.7A (Ta), 25A (Tc) | 6.2A (Ta), 35A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V | 2290 pF @ 25 V | 890 pF @ 25 V | 2340 pF @ 25 V |
FET Feature | - | - | - | - |
Eroflueden IRF6644TR1PBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF6644TR1PBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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