IRF640NSTRLPBF Tech Spezifikatioune
Infineon Technologies - IRF640NSTRLPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF640NSTRLPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V | |
| Power Dissipation (Max) | 150W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | |
| Basis Produktnummer | IRF640 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF640NSTRLPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF640NSTRLPBF | IRF640SPBF | IRF640NSTRRPBF | IRF640S |
| Hiersteller | Infineon Technologies | Vishay Siliconix | International Rectifier | Vishay Siliconix |
| Serie | HEXFET® | - | HEXFET® | - |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | 70 nC @ 10 V | 67 nC @ 10 V | 70 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 18A (Tc) | 18A (Tc) | 18A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V | 180mOhm @ 11A, 10V | 150mOhm @ 11A, 10V | 180mOhm @ 11A, 10V |
| Package protegéieren | Tape & Reel (TR) | Tube | Bulk | Tube |
| Supplier Device Package | D2PAK | D²PAK (TO-263) | D2PAK | D²PAK (TO-263) |
| Power Dissipation (Max) | 150W (Tc) | 3.1W (Ta), 130W (Tc) | 150W (Tc) | 3.1W (Ta), 130W (Tc) |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Basis Produktnummer | IRF640 | IRF640 | IRF640 | IRF640 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V | 1300 pF @ 25 V | 1160 pF @ 25 V | 1300 pF @ 25 V |
Eroflueden IRF640NSTRLPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF640NSTRLPBF - Infineon Technologies.
IRF640SPBFVishay SiliconixMOSFET N-CH 200V 18A D2PAK
IRF640NSTRPBFIRIRF640NSTRRPBFInternational RectifierIRF640 - HEXFET POWER MOSFETIRF640SVishay SiliconixMOSFET N-CH 200V 18A D2PAKIRF640NSPBFInternational RectifierMOSFET N-CH 200V 18A D2PAKIRF640NSTRRIRIRF640NLPBF MOSIRIRF640NSIRIRF640NSTRRHRIR
IRF640PBF MOSElectro-Films (EFI) / VishayIRF640NS MOSIRIRF640PBFVishay SiliconixMOSFET N-CH 200V 18A TO220ABIRF640NPBF MOSCypress Semiconductor (Infineon Technologies)IRF640NLPBFInfineon TechnologiesMOSFET N-CH 200V 18A TO262
IRF640NPBFInfineon TechnologiesMOSFET N-CH 200V 18A TO220ABIRF640NSTRLIRIRF640S MOSIRIRF640NSTRIR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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