IRF640NSPBF Tech Spezifikatioune
International Rectifier - IRF640NSPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRF640NSPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V | |
| Power Dissipation (Max) | 150W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRF640NSPBF.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | IRF640NSPBF | IRF640NPBF | IRF640PBF | IRF640NLPBF |
| Hiersteller | International Rectifier | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
| Package protegéieren | Bulk | Tube | Bulk | Tube |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 150W (Tc) | 150W (Tc) | 125W (Tc) | 150W (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 18A (Tc) | 18A (Tc) | 18A (Tc) |
| FET Feature | - | - | - | - |
| Serie | HEXFET® | HEXFET® | - | HEXFET® |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 25 V | 1160 pF @ 25 V | 1300 pF @ 25 V | 1160 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | 67 nC @ 10 V | 70 nC @ 10 V | 67 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V | 150mOhm @ 11A, 10V | 180mOhm @ 11A, 10V | 150mOhm @ 11A, 10V |
| Supplier Device Package | D2PAK | TO-220AB | TO-220AB | TO-262 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-220-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
IRF640PBF MOSElectro-Films (EFI) / VishayIRF640NSTRRHRIRIRF640NSTRRIRIRF640NSTRLIRIRF640NSTRIRIRF640NPBFInfineon TechnologiesMOSFET N-CH 200V 18A TO220ABIRF640PBFVishay SiliconixMOSFET N-CH 200V 18A TO220ABIRF640NLPBFInfineon TechnologiesMOSFET N-CH 200V 18A TO262IRF640NSTRRPBFInternational RectifierIRF640 - HEXFET POWER MOSFET
IRF640FPSTMicroelectronicsMOSFET N-CH 200V 18A TO220FPIRF640NSIRIRF640LPBFVishay SiliconixMOSFET N-CH 200V 18A TO262-3
IRF640NSTRLPBFInfineon TechnologiesMOSFET N-CH 200V 18A D2PAKIRF640NSTRPBFIRIRF640NIRIRF640NLPBF MOSIRIRF640NS MOSIRIRF640NPBF MOSCypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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