IRF5305LPBF Tech Spezifikatioune
Infineon Technologies - IRF5305LPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5305LPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-262 | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V | |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 55 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 31A (Tc) | |
| Basis Produktnummer | IRF5305 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5305LPBF.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | IRF5305LPBF | IRF530 | IRF5305PBF | IRF530 |
| Hiersteller | Infineon Technologies | STMicroelectronics | Infineon Technologies | Harris Corporation |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V | 458 pF @ 25 V | 1200 pF @ 25 V | 800 pF @ 25 V |
| Supplier Device Package | TO-262 | TO-220 | TO-220AB | TO-220AB |
| Serie | HEXFET® | STripFET™ II | HEXFET® | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 | TO-220-3 | TO-220-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 31A (Tc) | 14A (Tc) | 31A (Tc) | 14A (Tc) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 55 V | 100 V | 55 V | 100 V |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 21 nC @ 10 V | 63 nC @ 10 V | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Basis Produktnummer | IRF5305 | IRF5 | IRF5305 | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V | 160mOhm @ 7A, 10V | 60mOhm @ 16A, 10V | 180mOhm @ 8A, 10V |
| FET Typ | P-Channel | N-Channel | P-Channel | N-Channel |
| Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) | 60W (Tc) | 110W (Tc) | 75W (Tc) |
Eroflueden IRF5305LPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5305LPBF - Infineon Technologies.
IRF5210STRPBFIRIRF5305STRPBFVBSEMIIRF5305STRIRIRF5305S MOSIRIRF530STMicroelectronicsMOSFET N-CH 100V 14A TO220ABIRF5305S/F5305SIRIRF5305PBFInfineon TechnologiesMOSFET P-CH 55V 31A TO220ABIRF530Harris CorporationMOSFET N-CH 100V 14A TO220ABIRF5305SIRIRF5305S F5305SIRIRF523Harris CorporationN-CHANNEL POWER MOSFET
IRF522Fairchild (onsemi)
IRF5210STRRPBFInfineon TechnologiesMOSFET P-CH 100V 38A D2PAKIRF5305STRLPBFInfineon TechnologiesMOSFET P-CH 55V 31A D2PAK
IRF530onsemiMOSFET N-CH 100V 14A TO220ABIRF5305SPBFInfineon TechnologiesMOSFET P-CH 55V 31A D2PAK
IRF530Vishay SiliconixMOSFET N-CH 100V 14A TO220ABIRF5305IR| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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