IRF5210STRRPBF Tech Spezifikatioune
Infineon Technologies - IRF5210STRRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF5210STRRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D2PAK | |
| Serie | HEXFET® | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V | |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 100 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | |
| Basis Produktnummer | IRF5210 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF5210STRRPBF.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | IRF5210STRRPBF | IRF530 | IRF530 | IRF530 |
| Hiersteller | Infineon Technologies | Harris Corporation | STMicroelectronics | Vishay Siliconix |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) | 75W (Tc) | 60W (Tc) | 88W (Tc) |
| Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tube |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 38A (Tc) | 14A (Tc) | 14A (Tc) | 14A (Tc) |
| Basis Produktnummer | IRF5210 | - | IRF5 | IRF530 |
| FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V | 800 pF @ 25 V | 458 pF @ 25 V | 670 pF @ 25 V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-220-3 | TO-220-3 |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
| Serie | HEXFET® | - | STripFET™ II | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V | - | 21 nC @ 10 V | 26 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Supplier Device Package | D2PAK | TO-220AB | TO-220 | TO-220AB |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V | 180mOhm @ 8A, 10V | 160mOhm @ 7A, 10V | 160mOhm @ 8.4A, 10V |
Eroflueden IRF5210STRRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF5210STRRPBF - Infineon Technologies.
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IRF5210PBFInfineon TechnologiesMOSFET P-CH 100V 40A TO220ABIRF523Harris CorporationN-CHANNEL POWER MOSFETIRF5210STRPBFIR
IRF522Fairchild (onsemi)IRF5210STRLIRIRF5210SIRIRF5305PBFInfineon TechnologiesMOSFET P-CH 55V 31A TO220ABIRF5210SPBF MOSIRIRF5210S MOSIR
IRF5305LPBFInfineon TechnologiesMOSFET P-CH 55V 31A TO262| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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