IRF3709ZCS Tech Spezifikatioune
Infineon Technologies - IRF3709ZCS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF3709ZCS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.25V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V | |
Power Dissipation (Max) | 79W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 87A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF3709ZCS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF3709ZCS | IRF3709ZS | IRF3709STRLPBF | IRF3709 |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | Infineon Technologies |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 2.25V @ 250µA | 2.25V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 |
Input Capacitance (Ciss) (Max) @ Vds | 2130 pF @ 15 V | 2130 pF @ 15 V | 2672 pF @ 16 V | 2672 pF @ 16 V |
Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V | 26 nC @ 4.5 V | 41 nC @ 5 V | 41 nC @ 5 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
Power Dissipation (Max) | 79W (Tc) | 79W (Tc) | 3.1W (Ta), 120W (Tc) | 3.1W (Ta), 120W (Tc) |
Package protegéieren | Tube | Tube | Bulk | Tube |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 87A (Tc) | 87A (Tc) | 90A (Tc) | 90A (Tc) |
FET Feature | - | - | - | - |
Supplier Device Package | D2PAK | D2PAK | D2PAK | TO-220AB |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Rds On (Max) @ Id, Vgs | 6.3mOhm @ 21A, 10V | 6.3mOhm @ 21A, 10V | 9mOhm @ 15A, 10V | 9mOhm @ 15A, 10V |
Eroflueden IRF3709ZCS PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF3709ZCS - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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