IRF3709PBF Tech Spezifikatioune
International Rectifier - IRF3709PBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu International Rectifier - IRF3709PBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220AB | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V | |
Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V | |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu International Rectifier IRF3709PBF.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF3709PBF | IRF3708S | IRF3709S | IRF3708SPBF |
Hiersteller | International Rectifier | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±12V | ±20V | ±12V |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V | 24 nC @ 4.5 V | 41 nC @ 5 V | 24 nC @ 4.5 V |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Bulk | Tube | Tube | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V | 2417 pF @ 15 V | 2672 pF @ 16 V | 2417 pF @ 15 V |
Package / Case | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (th) (Max) @ Id | 3V @ 250µA | 2V @ 250µA | 3V @ 250µA | 2V @ 250µA |
Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V | 12mOhm @ 15A, 10V | 9mOhm @ 15A, 10V | 12mOhm @ 15A, 10V |
Supplier Device Package | TO-220AB | D2PAK | D2PAK | D2PAK |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 90A (Tc) | 62A (Tc) | 90A (Tc) | 62A (Tc) |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.8V, 10V | 4.5V, 10V | 2.8V, 10V |
Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) | 87W (Tc) | 3.1W (Ta), 120W (Tc) | 87W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.