IPI60R299CP Tech Spezifikatioune
Infineon Technologies - IPI60R299CP technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPI60R299CP
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 3.5V @ 440µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-TO262-3-1 | |
| Serie | CoolMOS™ | |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V | |
| Power Dissipation (Max) | 96W (Tc) | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPI60R299CP.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IPI60R299CP | IPI60R280C6 | IPI65R280C6 | IPI65R099C6 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 43 nC @ 10 V | 45 nC @ 10 V | 127 nC @ 10 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11A (Tc) | 13.8A (Tc) | 13.8A (Tc) | 38A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6.6A, 10V | 280mOhm @ 6.5A, 10V | 280mOhm @ 4.4A, 10V | 99mOhm @ 12.8A, 10V |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Vgs (th) (Max) @ Id | 3.5V @ 440µA | 3.5V @ 430µA | 3.5V @ 440µA | 3.5V @ 1.2mA |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 650 V | 650 V |
| Power Dissipation (Max) | 96W (Tc) | 104W (Tc) | 104W (Tc) | 278W (Tc) |
| Supplier Device Package | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V | 950 pF @ 100 V | 950 pF @ 100 V | 2780 pF @ 100 V |
| FET Feature | - | - | - | - |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | 10V | 10V |
| Serie | CoolMOS™ | CoolMOS™ C6 | CoolMOS C6™ | CoolMOS™ |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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