IPI60R190C6XKSA1 Tech Spezifikatioune
Infineon Technologies - IPI60R190C6XKSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPI60R190C6XKSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.5V @ 630µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO262-3 | |
Serie | CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V | |
Power Dissipation (Max) | 151W (Tc) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20.2A (Tc) | |
Basis Produktnummer | IPI60R190 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IPI60R190C6XKSA1 | IPI50R250CP | IPI60R385CP | IPI50R350CP |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Package protegéieren | Tube | Bulk | Bulk | Tube |
Supplier Device Package | PG-TO262-3 | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3 |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 600 V | 550 V |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 36 nC @ 10 V | 22 nC @ 10 V | 25 nC @ 10 V |
Power Dissipation (Max) | 151W (Tc) | 114W (Tc) | 83W (Tc) | 89W (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V | 250mOhm @ 7.8A, 10V | 385mOhm @ 5.2A, 10V | 350mOhm @ 5.6A, 10V |
Vgs (th) (Max) @ Id | 3.5V @ 630µA | 3.5V @ 520µA | 3.5V @ 340µA | 3.5V @ 370µA |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 100 V | 1420 pF @ 100 V | 790 pF @ 100 V | 1020 pF @ 100 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20.2A (Tc) | 13A (Tc) | 9A (Tc) | 10A (Tc) |
Basis Produktnummer | IPI60R190 | - | - | IPI50R |
FET Feature | - | - | - | - |
Serie | CoolMOS™ | CoolMOS™ | CoolMOS™ | CoolMOS™ |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
Eroflueden IPI60R190C6XKSA1 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPI60R190C6XKSA1 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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