IPB80R290C3AATMA2 Tech Spezifikatioune
Infineon Technologies - IPB80R290C3AATMA2 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB80R290C3AATMA2
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.9V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3-2 | |
Serie | Automotive, AEC-Q101, CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V | |
Power Dissipation (Max) | 227W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | IPB80R |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB80R290C3AATMA2.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IPB80R290C3AATMA2 | IPB90N04S402ATMA1 | IPB80P04P407ATMA2 | IPB80R290C3A |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | 118 nC @ 10 V | 89 nC @ 10 V | 117 nC @ 10 V |
Basis Produktnummer | IPB80R | IPB90N04 | IPB80P | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V | 2.1mOhm @ 90A, 10V | 7.4mOhm @ 80A, 10V | 290mOhm @ 11A, 10V |
Supplier Device Package | PG-TO263-3-2 | PG-TO263-3 | PG-TO263-3-2 | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 227W (Tc) | 150W (Tc) | 88W (Tc) | 227W (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V | 9430 pF @ 25 V | 6085 pF @ 25 V | 2300 pF @ 100 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Bulk |
FET Typ | N-Channel | N-Channel | P-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 800 V | 40 V | 40 V | 800 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 90A (Tc) | 80A (Tc) | 17A (Tc) |
Serie | Automotive, AEC-Q101, CoolMOS™ | OptiMOS™ | OptiMOS™ | Automotive, AEC-Q101, CoolMOS™ |
Vgs (th) (Max) @ Id | 3.9V @ 1mA | 4V @ 95µA | 4V @ 150µA | 3.9V @ 1mA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -40°C ~ 150°C (TJ) |
Eroflueden IPB80R290C3AATMA2 PDF DataDhusts an Infineon Technologies Dokumentatioun fir IPB80R290C3AATMA2 - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.