IPB80R290C3A Tech Spezifikatioune
Infineon Technologies - IPB80R290C3A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IPB80R290C3A
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.9V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO263-3-2 | |
Serie | Automotive, AEC-Q101, CoolMOS™ | |
Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V | |
Power Dissipation (Max) | 227W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IPB80R290C3A.
Produktiounsattriff | ||||
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Part Number | IPB80R290C3A | IPB80P04P407ATMA2 | IPB80R290C3AATMA1 | IPB90N04S402ATMA1 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | 10V |
Serie | Automotive, AEC-Q101, CoolMOS™ | OptiMOS™ | * | OptiMOS™ |
Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 100 V | 6085 pF @ 25 V | - | 9430 pF @ 25 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 80A (Tc) | - | 90A (Tc) |
Vgs (th) (Max) @ Id | 3.9V @ 1mA | 4V @ 150µA | - | 4V @ 95µA |
Gate Charge (Qg) (Max) @ Vgs | 117 nC @ 10 V | 89 nC @ 10 V | - | 118 nC @ 10 V |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | - | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 290mOhm @ 11A, 10V | 7.4mOhm @ 80A, 10V | - | 2.1mOhm @ 90A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Power Dissipation (Max) | 227W (Tc) | 88W (Tc) | - | 150W (Tc) |
FET Typ | N-Channel | P-Channel | - | N-Channel |
Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | PG-TO263-3-2 | PG-TO263-3-2 | - | PG-TO263-3 |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | - | Surface Mount |
Entworf fir Source Voltage (Vdss) | 800 V | 40 V | - | 40 V |
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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