IDH08G65C6XKSA1 Tech Spezifikatioune
Infineon Technologies - IDH08G65C6XKSA1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IDH08G65C6XKSA1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Voltage - Viru (Vf) (Max) @ Wann | 1.35 V @ 8 A | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Technologie | SiC (Silicon Carbide) Schottky | |
Supplier Device Package | PG-TO220-2 | |
Speed | No Recovery Time > 500mA (Io) | |
Serie | - | |
Reverse Recovery Time (trr) | 0 ns |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Package / Case | TO-220-2 | |
Package protegéieren | Tube | |
Operatiounstemperatur - Junction | -55°C ~ 175°C | |
Mounting Type | Through Hole | |
Aktuell - Reverse Leakage @ Vr | 27 µA @ 420 V | |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 20A | |
Capacitance @ Vr, F. | 401pF @ 1V, 1MHz | |
Basis Produktnummer | IDH08G65 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IDH08G65C6XKSA1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IDH08G65C6XKSA1 | IDH06S60C | IDH08S120AKSA1 | IDH08S120 |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
Supplier Device Package | PG-TO220-2 | PG-TO220-2-2 | PG-TO220-2-2 | PG-TO220-2 |
Aktuell - duerchschnëttlech rektifizéiert (Io) | 20A | 6A | 7.5A | 7.5A |
Serie | - | CoolSiC™+ | CoolSiC™+ | - |
Aktuell - Reverse Leakage @ Vr | 27 µA @ 420 V | 80 µA @ 600 V | 180 µA @ 1200 V | 180 µA @ 1200 V |
Package / Case | TO-220-2 | TO-220-2 | TO-220-2 | TO-220-2 |
Voltage - DC Reverse (Vr) (Max) | 650 V | 600 V | 1200 V | 1200 V |
Capacitance @ Vr, F. | 401pF @ 1V, 1MHz | 280pF @ 1V, 1MHz | 380pF @ 1V, 1MHz | 380pF @ 1V, 1MHz |
Basis Produktnummer | IDH08G65 | - | IDH08S | - |
Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C | -55°C ~ 175°C |
Package protegéieren | Tube | Bulk | Tube | Bulk |
Voltage - Viru (Vf) (Max) @ Wann | 1.35 V @ 8 A | 1.7 V @ 6 A | 1.8 V @ 7.5 A | 1.8 V @ 7.5 A |
Reverse Recovery Time (trr) | 0 ns | 0 ns | 0 ns | 0 ns |
Technologie | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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