IDH06S60C Tech Spezifikatioune
Infineon Technologies - IDH06S60C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IDH06S60C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 6 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | SiC (Silicon Carbide) Schottky | |
| Supplier Device Package | PG-TO220-2-2 | |
| Speed | No Recovery Time > 500mA (Io) | |
| Serie | CoolSiC™+ | |
| Reverse Recovery Time (trr) | 0 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 80 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6A | |
| Capacitance @ Vr, F. | 280pF @ 1V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IDH06S60C.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IDH06S60C | IDH08G65C6XKSA1 | IDH08G65C6 | IDH06S60 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Cypress Semiconductor (Infineon Technologies) | INFENON |
| Supplier Device Package | PG-TO220-2-2 | PG-TO220-2 | - | - |
| Voltage - Viru (Vf) (Max) @ Wann | 1.7 V @ 6 A | 1.35 V @ 8 A | - | - |
| Package protegéieren | Bulk | Tube | - | - |
| Capacitance @ Vr, F. | 280pF @ 1V, 1MHz | 401pF @ 1V, 1MHz | - | - |
| Reverse Recovery Time (trr) | 0 ns | 0 ns | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 6A | 20A | - | - |
| Operatiounstemperatur - Junction | -55°C ~ 175°C | -55°C ~ 175°C | - | - |
| Package / Case | TO-220-2 | TO-220-2 | - | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 650 V | - | - |
| Technologie | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | - | - |
| Serie | CoolSiC™+ | - | - | - |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) | - | - |
| Aktuell - Reverse Leakage @ Vr | 80 µA @ 600 V | 27 µA @ 420 V | - | - |
| Mounting Type | Through Hole | Through Hole | - | - |
IDH08G65C6XKSA1Infineon TechnologiesDIODE SIL CARB 650V 20A TO220-2IDH08G65C6Cypress Semiconductor (Infineon Technologies)IDH06S60INFENONIDH05S60C/D05S60CCypress Semiconductor (Infineon Technologies)IDH05S60CCypress Semiconductor (Infineon Technologies)IGBT ModuleIDH06SG60CCypress Semiconductor (Infineon Technologies)IDH05SG60C D05G60CCypress Semiconductor (Infineon Technologies)IDH08G65C5Cypress Semiconductor (Infineon Technologies)IDH06G65C6Cypress Semiconductor (Infineon Technologies)IDH08G65C6XKSA2Cypress Semiconductor (Infineon Technologies)IDH08G65C5XKSA2InfineonIDH06SG60CXKSA2InfineonIDH05S60C D05S60CCypress Semiconductor (Infineon Technologies)IDH06SG60C D06G60CCypress Semiconductor (Infineon Technologies)IDH06G65C5Cypress Semiconductor (Infineon Technologies)IDH05SG60CCypress Semiconductor (Infineon Technologies)IGBT ModuleIDH08G120C5Cypress Semiconductor (Infineon Technologies)IDH05S120 D05S120Cypress Semiconductor (Infineon Technologies)| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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